A Three-dimensional simulation study of the performance of Carbon Nanotube Field Effect Transistors with doped reservoirs and realistic geometry

摘要

In this work, we simulate the expected device performance and the scalingperspectives of Carbon nanotube Field Effect Transistors (CNT-FETs), with dopedsource and drain extensions. The simulations are based on the self-consistentsolution of the 3D Poisson-Schroedinger equation with open boundary conditions,within the Non-Equilibrium Green's Function formalism, where arbitrary gategeometry and device architecture can be considered. The investigation of shortchannel effects for different gate configurations and geometry parameters showsthat double gate devices offer quasi ideal subthreshold slope and DIBL withoutextremely thin gate dielectrics. Exploration of devices with parallel CNTs showthat On currents per unit width can be significantly larger than the siliconcounterpart, while high-frequency performance is very promising.